Manufacturing method of light-emitting device

ABSTRACT

A manufacturing method of a light-emitting device is provided. A substrate and a light-emitting component disposed on the substrate are provided. A translucent layer is provided. The translucent layer is connected with the light-emitting component by an adhesive layer. A reflective layer is formed above the substrate, wherein the reflective layer covers a lateral surface of the light-emitting component, a lateral surface of the adhesive layer and a lateral surface of the translucent layer. A translucent encapsulant is formed on the substrate to encapsulate the light-emitting component, the translucent layer and the reflective layer.

This application is a divisional application of co-pending U.S.application Ser. No. 15/787,811, filed Oct. 19, 2017, which claims thebenefits of U.S. provisional application Ser. No. 62/410,376, filed Oct.19, 2016, the subject matters of which are incorporated herein byreference.

TECHNICAL FIELD

The disclosure relates in general to a light-emitting device and amanufacturing method thereof, and more particularly to a light-emittingdevice having a reflective layer and a manufacturing method thereof.

BACKGROUND

Conventional light-emitting device includes a phosphor glue and alight-emitting component, wherein the phosphor glue covers an uppersurface and a lateral surface of the light-emitting component. The hightemperature generated by the light-emitting component, whenilluminating, will negatively affect the phosphor glue, speed up thedeterioration of the phosphor glue and change the light color.

Therefore, it has become a prominent task for the industry to slow thedeterioration of the phosphor glue.

SUMMARY

Thus, the disclosure provides a light-emitting device capable ofrelieving the deterioration of the phosphor glue and a manufacturingmethod thereof.

According to one embodiment, a light-emitting device is provided. Thelight-emitting device includes a substrate, a light-emitting component,a translucent layer, an adhesive layer, a reflective layer andtranslucent encapsulant. The light-emitting component is disposed on thesubstrate. The adhesive layer is formed between the light-emittingcomponent and the translucent layer. The reflective layer is formedabove the substrate and covering a lateral surface of the light-emittingcomponent, a lateral surface of the adhesive layer and a lateral surfaceof the translucent layer. The translucent encapsulant is formed on thesubstrate and encapsulating the light-emitting component, thetranslucent layer and the reflective layer.

According to another embodiment, a manufacturing method of alight-emitting device is provided. The manufacturing method includes thefollowing steps. A substrate and a light-emitting component disposed onthe substrate are provided; a translucent layer is provided; thetranslucent layer is connected with the light-emitting component by anadhesive layer; a reflective layer is formed above the substrate,wherein the reflective layer covers a lateral surface of thelight-emitting component, a lateral surface of the adhesive layer and alateral surface of the translucent layer; and a translucent encapsulantis formed on the substrate to encapsulate the light-emitting component,the translucent layer and the reflective layer.

The above and other aspects of the invention will become betterunderstood with regard to the following detailed description of thepreferred but non-limiting embodiment (s). The following description ismade with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a light-emitting deviceaccording to an embodiment of the invention;

FIG. 2 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 3 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 4 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIGS. 5A to 5H illustrate manufacturing processes of the light-emittingdevice of FIG. 1;

FIGS. 6A to 6C illustrate another manufacturing processes of thelight-emitting device of FIG. 1;

FIGS. 7A to 7C illustrate manufacturing processes of the light-emittingdevice of FIG. 2;

FIGS. 8A to 8C illustrate manufacturing processes of the light-emittingdevice of FIG. 3;

FIGS. 9A to 9F illustrate manufacturing processes of the light-emittingdevice of FIG. 4;

FIG. 10 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 11 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 12 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 13 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 14 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 15 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIG. 16 illustrates a cross sectional view of a light-emitting deviceaccording to another embodiment of the invention;

FIGS. 17A to 17G illustrate manufacturing processes of thelight-emitting device of FIG. 10;

FIG. 18 illustrates manufacturing process of the light-emitting deviceof FIG. 11;

FIGS. 19A to 19F illustrate manufacturing processes of thelight-emitting device of FIG. 12;

FIGS. 20A to 20C illustrate manufacturing processes of thelight-emitting device of FIG. 13;

FIGS. 21A to 21C illustrate manufacturing processes of thelight-emitting device of FIG. 14;

FIG. 22 illustrates manufacturing process of the light-emitting deviceof FIG. 15; and

FIG. 23 illustrates manufacturing process of the light-emitting deviceof FIG. 16.

DETAILED DESCRIPTION

FIG. 1 illustrates a cross-sectional view of a light-emitting device 100according to an embodiment of the invention. The light-emitting device100 includes a substrate 110, a light-emitting component 120, awavelength conversion layer 130, an adhesive layer 140 and a reflectivelayer 150.

The substrate 110 is, for example, a ceramic substrate. In the presentembodiment, the substrate 110 includes a base 111, a third electrode112, a fourth electrode 113, a first pad 114, a second pad 115, a firstconductive post 116 and a second conductive post 117.

The base 111 is made of a material such as silicon-based material. Thebase 111 has a first surface 111 u and a second surface 111 b oppositeto the first surface 111 u. The third electrode 112 and the fourthelectrode 113 are formed on the first surface 111 u of the base 111, andthe first pad 114 and the second pad 115 are formed on the secondsurface 111 b of the base 111. The first conductive post 116 and thesecond conductive post 117 pass through the base 111, wherein the firstconductive post 116 connects the third electrode 112 to the first pad114 for electrically connecting the third electrode 112 to the first pad114, and the second conductive post 117 connects the fourth electrode113 to the second pad 115 for electrically connecting the fourthelectrode 113 to the second pad 115.

The light-emitting device 100 may be disposed on a circuit board (notillustrated), wherein the first pad 114 and the second pad 115 of thesubstrate 110 are electrically connected to two electrodes (notillustrated) of the circuit board, such that the light-emittingcomponent 120 is electrically connected to the circuit board through thefirst pad 114 and the second pad 115.

The light-emitting component 120 is disposed on the substrate 110. Thelight-emitting component 120 includes a first electrode 121 and a secondelectrode 122, wherein the first electrode 121 and the second electrode122 are electrically connected to the third electrode 112 and the fourthelectrode 113 respectively.

The light-emitting component 120 is, for example, a light-emittingdiode. Although not illustrated, the light-emitting component 120 mayfurther comprise a first type semiconductor layer, a second typesemiconductor layer and a light emitting layer, wherein the lightemitting layer is formed between the first type semiconductor layer andthe second type semiconductor layer. The first type semiconductor layeris realized by such as an N-type semiconductor layer, and the secondtype semiconductor layer is realized by such as an P-type semiconductorlayer. Alternatively, the first type semiconductor layer is realized bysuch as a P-type semiconductor layer, and the second type semiconductorlayer is realized by such as an N-type semiconductor layer. The P-typesemiconductor is realized by a GaN-based semiconductor doped withtrivalent elements such as a gallium nitride based semiconductor layerwhich is doped with Beryllium (Be), zinc (Zn), manganese (Mn), chromium(Cr), magnesium (Mg), calcium (Ca), etc. The N-type semiconductor isrealized by a GaN-based semiconductor doped with doped with silicon(Si), germanium (Ge), tin (Sn), sulfur (S), oxygen (O), titanium (Ti)and or zirconium (Zr), etc. The light emitting layer 122 may berealized, but is not limited to, by a structure ofI_(x)Al_(y)Ga_(1-x-y)N (0≤x.0≤y.x+y≤1) or a structure which is dopedwith Boron (B), phosphorus (P) or arsenic (As). In addition, the lightemitting layer 122 may be a single-layered structure or multi-layeredstructure.

The first electrode 121 may be realized by a single-layered structure ora multi-layered structure which is made of at least one of materialsincluding gold, aluminum, silver, copper, rhodium (Rh), ruthenium (Ru),palladium (Pd), iridium (Ir), platinum (Pt), chromium, tin, nickel,titanium, tungsten (W), chromium alloys, titanium tungsten alloys,nickel alloys, copper silicon alloy, aluminum silicon copper alloy,aluminum silicon alloy, gold tin alloy, but is not limited thereto. Thesecond electrode 122 may be realized by a single-layered structure or amulti-layered structure. The second electrode 122 may be made of amaterial similar to that of the first electrode 121.

The wavelength conversion layer 130 includes a high-density phosphorlayer 131 and a low-density phosphor layer 132. The wavelengthconversion layer 130 includes a plurality of phosphor particles, whereina region whose phosphor particle density is higher is defined as thehigh-density phosphor layer 131, and a region whose phosphor particledensity is lower is defined as the low-density phosphor layer 132. In anembodiment, a ratio of a phosphor particle density of the high-densityphosphor layer 131 and a phosphor particle density of the low-densityphosphor layer 132 ranges between 1 and 10¹⁵, wherein the range maycontain or may not contain 1 and 10¹⁵.

In the present embodiment, the high-density phosphor layer 131 islocated between the light-emitting component 120 and the low-densityphosphor layer 132. That is, the light emitted from the light-emittingcomponent 120 first passes through the high-density phosphor layer 131,and then is emitted out of the wavelength conversion layer 130 throughthe low-density phosphor layer 132. Due the design of the high-densityphosphor layer 131, the light color of the light-emitting device 100 canbe collectively distributed in the chromaticity coordinate. As a result,the yield of the light-emitting device 100 may be increased. Thelow-density phosphor layer 132 may increase a light mixing probability.In detail, for the light L1 which has not contacted the phosphorparticles within the high-density phosphor layer 131 yet, thelow-density phosphor layer 132 increases the probability of the light L1contacting the phosphor particles. In the present embodiment, athickness T2 of the low-density phosphor layer 132 is larger than athickness T1 of the high-density phosphor layer 131, and accordingly thelight mixing probability of the light L1 of the light-emitting component120 can be further increased. In an embodiment, a ratio of the thicknessT2 and the thickness T1 ranges between 1 and 1000, wherein the range maycontain or may not contain 1 and 1000.

The wavelength conversion layer 130 covers the entire upper surface 120u of the light-emitting component 120. That is, in the presentembodiment, the area of the wavelength conversion layer 130 viewed fromthe top view is larger than the area of the light-emitting component 120viewed from the top view. In an embodiment, a ratio of the area of thewavelength conversion layer 130 viewed from the top view and the area ofthe light-emitting component 120 viewed from the top view ranges between1 and 1.35, however less than 1 or larger than 1.35 is also feasible.

In an embodiment, the wavelength conversion layer 130 may be made of amaterial including sulfide, Yttrium aluminum garnet (YAG), LuAG,silicate, nitride, oxynitride, fluoride, TAG, KSF, KTF, etc.

The adhesive layer 140 includes, but is not limited to, transparentresin, wherein the transparent resin includes, but is not limited to,silicone, epoxy resin or other synthetic resin. The adhesive layer 140includes a first lateral portion 141 and a heat resistance layer 142.The first lateral portion 141 covers a portion of a lateral surface 120s of the light-emitting component 120, and another portion or the otherportion of the lateral surface 120 s of the light-emitting component 120is covered by the reflective layer 150. Viewed from the direction of thetop view of FIG. 1, the first lateral portion 141 is shaped into aclosed ring shape which surrounds the entire lateral surface 120 s ofthe light-emitting component 120. In another embodiment, the firstlateral portion 141 may be shaped into an open ring shape.

As illustrated in an enlargement view of FIG. 1, the heat resistancelayer 142 of the adhesive layer 140 is formed between the high-densityphosphor layer 131 and the light-emitting component 120, and accordinglyit can increase the heat resistance between the light-emitting component120 and the wavelength conversion layer 130 to slows the degrading speedof the wavelength conversion layer 130. In detail, if the heat generatedfrom the light-emitting component 120 is easily transmitted to thewavelength conversion layer 130, it will speed up the deterioration ofthe phosphor particles within the wavelength conversion layer 130. Inthe present embodiment, due to the forming of the heat resistance layer142, the heat transmitted to the wavelength conversion layer 130 can bedecreased, and accordingly it can slow the deterioration of the phosphorparticles within the wavelength conversion layer 130. In an embodiment,the thickness of the heat resistance layer 142 may range between 1 and1000, wherein the range may contain or may not contain 1 and 1000.

The reflective layer 150 is formed above the substrate 110 and coversthe lateral surface 120 s of the light-emitting component 120, a lateralsurface 141 s of the first lateral portion 141 of the adhesive layer 140and a lateral surface 130 s of the wavelength conversion layer 130, andaccordingly it can advantageously protect the light-emitting component120 and the wavelength conversion layer 130 from being exposed to bedamaged. The reflective layer 150 may reflect the light L1 emitted fromthe lateral surface 120 s of the light-emitting component 120 to thewavelength conversion layer 130, and accordingly it can increase theluminous efficiency of the light-emitting device 100.

As illustrated in FIG. 1, the reflective layer 150 further covers alateral surface of the first electrode 121, a lateral surface of thesecond electrode 122, a lateral surface of the third electrode 112 and alateral surface of the fourth electrode 113. As a result, it can preventthe first electrode 121, the second electrode 122, the third electrode112 and the fourth electrode 113 from being exposed and damaged by theenvironment, such as oxidation, humidity, etc.

There is a first gap G1 between the first electrode 121 and the secondelectrode 122, and there is a second gap G2 between the third electrode112 and the fourth electrode 113. The reflective layer 150 includes afilling portion 152, and the first gap G1 and/or the second gap G2 isfilled with the filling portion 152.

The reflective layer 150 includes a first reflective portion 151 whichsurrounds the lateral surface 120 s of the light-emitting component 120.The first reflective portion 151 has a first reflective surface 151 sfacing the lateral surface 120 s of the light-emitting component 120and/or the wavelength conversion layer 130 for reflecting the light L1emitted from the lateral surface 120 s of the light-emitting component120 to the wavelength conversion layer 130. In the present embodiment,the first reflective surface 151 s is a convex surface facing thelateral surface 120 s of the light-emitting component 120 and/or thewavelength conversion layer 130. In another embodiment, the firstreflective surface 151 s may be a concave surface.

As illustrated in FIG. 1, the convex first reflective surface 151 sconnects a lower surface 130 b of the wavelength conversion layer 130 tothe lateral surface 120 s of the light-emitting component 120. As aresult, it can increase the probability of the light L1 emitted from thelight-emitting component 120 contacting the convex surface, such thatthe light Li emitted from the light-emitting component 120 almost orcompletely is reflected by the reflective layer 150 to the wavelengthconversion layer 130 and then is emitted out of the light-emittingdevice 100, and accordingly it can increase the luminous efficiency ofthe light-emitting device 100.

In an embodiment, the reflective layer 150 has a reflectivity largerthan 90%. The reflective layer 150 may be made of a material includingPoly phthalic amide (PPA), polyamide (PA), polyethylene terephthalate(PTT), polyethylene terephthalate (PET), polyethylene terephthalate1,4-cyclohexane dimethylene terephthalate (POT), epoxy compound (EMC),silicone compound (SMC) or other resin/ceramic material having highreflectivity. In addition, the reflective layer 150 may be a white glue.For example, the reflective layer 150 is made of silicone, epoxy orother synthetic resins including white metal oxide powders. The metaloxide includes, but is not limited to, titanium oxides.

As described above, in comparison with the conventional light-emittingdevice, the luminous area of the light-emitting device 100 can increaseby 40% and the brightness of the light-emitting device 100 can increaseby 15%.

FIG. 2 illustrates a cross sectional view of a light-emitting device 200according to another embodiment of the invention, The light-emittingdevice 200 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140 and thereflective layer 150,

In comparison with the light-emitting device 100, the top-viewed area ofthe wavelength conversion layer 130 of the light-emitting device 200 issubstantially equal to the top-viewed area of the light-emittingcomponent 120 of the light-emitting device 200, that is, the ratio ofthe top-viewed area of the wavelength conversion layer 130 and thetop-viewed area of the light-emitting component 120 is about 1. Due thefirst lateral portion 141 of the adhesive layer 140 being removed, theentire lateral surface 120 s of the light-emitting is component 120 andthe entire lateral surface 142 s of the heat resistance layer 142 of theadhesive layer 140 are exposed, and accordingly the entire lateralsurface 120 s of the light-emitting component 120 and the entire lateralsurface 142 s of the heat resistance layer 142 of the adhesive layer 140can be covered by the reflective layer 150. Furthermore, since thelateral surface 120 s of the light-emitting component 120, the lateralsurface 130 s of the wavelength conversion layer 130 and the lateralsurface 142 s of the heat resistance layer 142 of the adhesive layer 140can be formed in the same singulation process, the lateral surface 120s, the lateral surface 130 s and the lateral surface 142 s aresubstantially aligned or flush with each other.

FIG. 3 illustrates a cross sectional view of a light-emitting device 300according to another embodiment of the invention. The light-emittingdevice 300 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140 and thereflective layer 150.

In comparison with the light-emitting device 100, the reflective layer150 of the light-emitting device 300 further covers a lateral surface110 s of the substrate 110, and accordingly it can prevent or reduce thedamage by the exterior environmental factors (such as air, water, gas,etc.) through the lateral surface 110 s of the substrate 110.Furthermore, due to the reflective layer 150 covering the lateralsurface 110 s of the substrate 110, it can increase a length of a pathP1 from the exterior environmental to the electrode (the first electrode121 and/or the second electrode 122) of the light-emitting is component120 (in comparison with the path P1 of FIG. 1, the length of the path P1of the present embodiment is longer), and accordingly it can reduce theprobability of the light-emitting component 120 being damaged by theenvironmental factors for increasing the reliability and life of thelight-emitting device 300.

In another embodiment, the top-viewed area of the wavelength conversionlayer 130 of the light-emitting device 300 is substantially equal to thetop-viewed area of the light-emitting component 120. Such structure issimilar to the structure of the light-emitting device 200, and thesimilarities are not repeated.

FIG. 4 illustrates a cross sectional view of a light-emitting device 400according to another embodiment of the invention. The light-emittingdevice 400 includes the substrate 110, a plurality of the light-emittingcomponents 120, the wavelength conversion layer 130, the adhesive layer140 and the reflective layer 150. The light-emitting components 120 aredisposed on the substrate 110. The adhesive layer 140 covers at least aportion of the lateral surface 120 s of each light-emitting component120.

In comparison with the aforementioned light-emitting device, a portionof the adhesive layer 140 of the light-emitting device 400 is furtherformed between adjacent two light-emitting components 120. For example,the adhesive layer 140 further includes a second lateral portion 143located between two light-emitting components 120, and the secondlateral portion 143 has a lower surface 143 s, wherein the lower surface143 s is a convex surface or a concave surface. The reflective layer 150is formed between adjacent two light-emitting components 120. Forexample, the reflective layer 150 further includes a second reflectiveportion 153, wherein the second reflective portion 153 is locatedbetween adjacent two light-emitting components 120. The secondreflective portion 153 has a second reflective surface 153 s complyingwith the lower surface 143 s, and accordingly the second reflectivesurface 153 s is a concave surface. In another embodiment, the lowersurface 143 s may be a concave surface, and the second reflectivesurface 153 s is a convex surface. The second reflective surface 153 smay reflect the light L1 emitted by the light-emitting component 120 tothe wavelength conversion layer 130, and accordingly it can increase theluminous efficiency of the light-emitting device 400.

In another embodiment, the reflective layer 150 of the light-emittingdevice 400 may further cover the lateral surface 110 s of the substrate110 s. Such structure is similar to the structure of the light-emittingdevice 300, and the similarities are not repeated.

In another embodiment, the top-viewed area of the wavelength conversionlayer 130 of the light-emitting device 400 is substantially equal to thetop-viewed area of the light-emitting component 120. Such structure issimilar to the structure of the light-emitting device 200, and thesimilarities are not repeated.

FIGS. 5A to 5H illustrate manufacturing processes of the light-emittingdevice 100 of FIG. 1.

As illustrated in FIG. 5A, a wavelength conversion resin 130′ is formedon a carrier 10 by way of, for example, dispensing. The wavelengthconversion resin 130′ contains a plurality of the phosphor particles133. The polarity of the carrier 10 and the polarity of the wavelengthconversion resin 130′ are different, and accordingly the wavelengthconversion resin 130′ and the carrier 10 may be easily detached. Inaddition, although not illustrated, the carrier 10 may include adouble-sided adhesive layer and a carrier plate, wherein thedouble-sided adhesive layer is adhered to the carrier plate for carryingthe wavelength conversion resin 130′.

As illustrated in FIG. 5B, after the wavelength conversion resin 130′ isstood for a period such as 24 hours, most of the phosphor particles 133precipitate on a bottom of the wavelength conversion resin 130′ to formthe high-density phosphor layer 131, wherein the other of the phosphorparticles 133 are distributed within the other portion of the wavelengthconversion layer material 130′ to form the low-density phosphor layer132. The high-density phosphor layer 131 and the low-density phosphorlayer 132 form the wavelength conversion layer 130.

Then, the wavelength conversion layer 130 is cured. As a result, thepositions of the phosphor particles 133 can be fixed, and accordingly itcan prevent the density distribution of the phosphor particles 133within the wavelength conversion layer 130 from being easily changed.

Then, the carrier 10 and the wavelength conversion layer 130 areseparated to expose the high-density phosphor layer 131 of thewavelength conversion layer 130.

As illustrated in FIG. 50, the substrate 110 and at least onelight-emitting component 120 are provided, wherein the light-emittingcomponent 120 is disposed on the substrate 110. In addition, thesubstrate 110 may be disposed on another carrier 10′, wherein thecarrier 10′ has a structure similar to that of the carrier 10, and thesimilarities are not repeated.

Then, the high-density phosphor layer 131 of the wavelength conversionlayer 130 is adhered to the light-emitting component 120 by the adhesivelayer 140. The following description will be made with reference to theaccompanying drawings.

As illustrated in FIG. 5D, the adhesive layer 140 is formed on the uppersurface 120 u of the light-emitting component 120 by way of, forexample, applying or dispensing.

As illustrated in FIG. 5E, the wavelength conversion layer 130 isdisposed on the adhesive layer 140, such that the adhesive layer 140adheres the light-emitting component 120 to the high-density phosphorlayer 131 of the wavelength conversion layer 130. Since the wavelengthconversion layer 130 extrudes the adhesive layer 140, the adhesive layer140 flow toward two sides of the light-emitting component 120 to formthe first lateral portion 141. Due to surface tension, the lateralsurface 141 s of the first lateral portion 141 forms a concave surface.Depending on the amount of the adhesive layer 140 and/or the property ofthe adhesive layer 140, the lateral surface 141 s may form a convexsurface. In addition, depending on the amount of the adhesive layer 140and/or the property of the adhesive layer 140, the first lateral portion141 may cover at least a portion of the lateral surface 120 s of thelight-emitting component 120.

As illustrated in an enlargement view of FIG. 5E, a portion of theadhesive layer 140 which remains on between the wavelength conversionlayer 130 and the light-emitting component 120 forms the heat resistancelayer 142. The heat resistance layer 142 may reduce the heat oftransmitting to the wavelength conversion layer 130 from thelight-emitting component 120, and accordingly it can slow the degradingspeed of the wavelength conversion layer 130.

As illustrated in FIG. 5F, at least one first singulation path W1passing through the wavelength conversion layer 130 is formed to cut offthe wavelength conversion layer 130. In the present embodiment, thefirst singulation path W1 does not pass through the first lateralportion 141 of the adhesive layer 140. In another embodiment, the firstsingulation path W1 may pass through a portion of the first lateralportion 141. The lateral surface 130 s of the wavelength conversionlayer 130 is formed by the first singulation path W1, wherein thelateral surface 130 s may be a plane or a curved surface.

The cutting width for forming the first singulation path W1 may besubstantially equal to the width of the first singulation path W1.Alternatively, after the first singulation path W1 is formed, thedouble-sided adhesive layer (not illustrated) disposed on the carrier10′ may be stretched to increase an interval between adjacent twolight-emitting components 120. Under such design, the first singulationpath W1 may be formed using a thin blade.

As illustrated in FIG. 5G, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, compression molding,wherein the reflective layer 150 covers a portion of the lateral surface120 s of the light-emitting component 120, the lateral surface 130 s ofthe wavelength conversion layer 130, the lateral surface 141 s of thefirst lateral portion 141 of the adhesive layer 140, the lateral surfaceof the third electrode 112 of the substrate 110, the lateral surface ofthe fourth electrode 113 of the substrate 110, the lateral surface ofthe first electrode 121 of the light-emitting component 120 and thelateral surface of the second electrode 122 of the light-emittingcomponent 120.

In addition, the reflective layer 150 includes the first reflectiveportion 151 surrounding the entire lateral surface 120 s of thelight-emitting component 120. The first reflective portion 151 has thefirst reflective surface 151 s, Due to the lateral surface 141 s of theadhesive layer 140 being a concave surface, the first reflective surface151 s covering the lateral surface 141 s is a convex surface facing thewavelength conversion layer 130 and the light-emitting component 120.The convex first reflective surface 151 s can reflect the light L1emitted from the lateral surface 120 s to the wavelength conversionlayer 130, and accordingly it can increase the luminous efficiency ofthe light-emitting device 100.

Since the first singulation path W1 of FIG. 5F does not pass through thefirst lateral portion 141 of the adhesive layer 140, the firstreflective surface 151 s of the reflective layer 150 can contact thelower surface 130 b of the wavelength conversion layer 130. As a result,the convex first reflective surface 151 s connects the lower surface 130b of the wavelength conversion layer 130 to the lateral surface 120 s ofthe light-emitting component 120, and accordingly it can increase thecontacting area of the light L1 emitted from the light-emittingcomponent 120 and the convex surface (the first reflective surface 151s).

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 5H, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 is formedto form the light-emitting device 100 of FIG. 1. The first reflectivesurface 151 s of the reflective layer 150 and the lateral surface 110 sof the substrate 110 are formed by the second singulation path W2,wherein the first reflective surface 151 s and the lateral surface 110 sare substantially aligned or flush with each other.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

In addition, the cutting width for forming the second singulation pathW2 may be substantially equal to the width of the second singulationpath W2. Alternatively, after the second singulation path W2 is formed,the double-sided adhesive layer (not illustrated) disposed on thecarrier 10′ may be stretched to increase an interval between adjacenttwo light-emitting components 120. Under such design, the secondsingulation path W2 may be formed using a thin blade.

FIGS. 6A to 6C illustrate another manufacturing processes of thelight-emitting device 100 of FIG. 1.

As illustrated in FIG. 6A, the adhesive layer 140 is formed on thehigh-density phosphor layer 131 of the wavelength conversion layer 130by way of, for example, applying or dispensing.

As illustrated in FIG. 6B, the substrate 110 and the light-emittingcomponent 120 of FIG. 5C are disposed on the adhesive layer 140, whereinthe light-emitting component 120 contacts with the adhesive layer 140,such that the adhesive layer 140 adheres the light-emitting component120 to the high-density phosphor layer 131 of the wavelength conversionlayer 130.

Due to the light-emitting component 120 extruding the adhesive layer140, the adhesive layer 140 flows toward two sides of the light-emittingcomponent 120 to form the first lateral portion 141. Due to surfacetension, the lateral surface 141 s of the first lateral portion 141forms a concave surface. Depending on the amount of the adhesive layer140 and/or the property of the adhesive layer 140, the first lateralportion 141 may cover at least a portion of the lateral surface 120 s ofthe light-emitting component 120. In addition, as illustrated in anenlargement view of FIG. 6B, a portion of the adhesive layer 140 whichremains on between the wavelength conversion layer 130 and thelight-emitting component 120 forms the heat resistance layer 142. Theheat resistance layer 142 may reduce the heat of transmitting to thewavelength conversion layer 130 from the light-emitting component 120,and accordingly it can slow the degrading speed of the wavelengthconversion layer 130.

As illustrated in FIG. 6C, the light-emitting components 120, thewavelength conversion layer 130 and the substrate 110 are inverted, suchthat the wavelength conversion layer 130 faces upwardly.

The following steps are similar the corresponding steps of FIGS. 5A to5H, and the similarities are not repeated.

FIGS. 7A to 7C illustrate manufacturing processes of the light-emittingdevice 200 of FIG. 2.

Firstly, the structure of FIG. 5E is formed by using the processes ofFIG. 5A to 5E, or the structure of FIG. 6C is formed by using theprocesses of FIG. 6A to 6C.

Then, as illustrated in FIG. 7A, at least one first singulation path W1passing through the wavelength conversion layer 130 and the firstlateral portion 141 which covers the lateral surface 120 s of thelight-emitting component 120 is formed, by way of cutting, to cut offthe wavelength conversion layer 130 and remove the first lateral portion141. Since formation of the first singulation path W1 cuts off the firstlateral portion 141, such that the entire lateral surface 120 s of thelight-emitting component 120 and the entire lateral surface 142 s of theheat resistance layer 142 are be formed and exposed.

As illustrated in FIG. 7B, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, compression molding,wherein the reflective layer 150 covers the entire lateral surface 120 sof the light-emitting component 120, the entire lateral surface 142 s ofthe heat resistance layer 142, the entire lateral surface 130 s of thewavelength conversion layer 130, the lateral surface of the thirdelectrode 112 of the substrate 110, the lateral surface of the fourthelectrode 113 of the substrate 110, the lateral surface of the firstelectrode 121 of the light-emitting component 120 and the lateralsurface of the second electrode 122 of the light-emitting component 120.

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 70, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 isformed, by way of cutting, to form the light-emitting device 200 of FIG.2. The lateral surface 150 s of the reflective layer 150 and the lateralsurface 110 s of the substrate 110 are formed by the second singulationpath W2, wherein the lateral surface 150 s and the lateral surface 110 sare substantially aligned or flush with each other.

FIGS, 8A to 8C illustrate manufacturing processes of the light-emittingdevice 300 of FIG. 3.

Firstly, the structure of FIG, 5E is formed by using the processes ofFIG. 5A to 5E, or the structure of FIG, 60 is formed by using theprocesses of FIG, 6A to 6C.

Then, as illustrated in FIG. 8A, at least one first singulation path W1passing through the wavelength conversion layer 130 and the substrate110 is formed, by way of cutting, to cut off the wavelength conversionlayer 130 and the substrate 110. The lateral surface 130 s of thewavelength conversion layer 130 and the lateral surface 110 s of thesubstrate 110 are formed by the first singulation path W1, wherein thelateral surface 130 s and the lateral surface 110 s are substantiallyaligned or flush with each other.

As illustrated in FIG. 8B, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, dispensing, wherein thereflective layer 150 covers a portion of the lateral surface 120 s ofthe light-emitting component 120, the lateral surface 130 s of thewavelength conversion layer 130, the lateral surface 141 s of the firstlateral portion 141 of the adhesive layer 140, the lateral surface 110 sof the substrate 110, the lateral surface of the third electrode 112 ofthe substrate 110, the lateral surface of the fourth electrode 113 ofthe substrate 110, the lateral surface of the first electrode 121 of thelight-emitting component 120 and the lateral surface of the secondelectrode 122 of the light-emitting component 120,

Then, he reflective layer 150 is cured by way of heating.

As illustrated in FIG. 8C, at least one second singulation path W2passing through the reflective layer 150 is formed to form thelight-emitting device 300 of FIG. 3, wherein the lateral surface 150 sand the reflective layer 150 is formed by the second singulation pathW2.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

FIGS. 9A to 9F illustrate manufacturing processes of the light-emittingdevice 400 of FIG. 4.

As illustrated in FIG. 9A, the substrate 110 and a plurality of thelight-emitting components 120 are provided, wherein the light-emittingcomponents 120 are disposed on the substrate 110.

As illustrated in FIG, 9A, the substrate 110 and the light-emittingcomponents 120 are disposed on the carrier 10′.

As illustrated in FIG. 9B, the adhesive layer 140 is formed on the uppersurface 120 u of the light-emitting component 120 by way of, forexample, applying or dispensing.

As illustrated in FIG. 90, the wavelength conversion layer 130 isdisposed on the adhesive layer 140, such that the adhesive layer 140adheres each light-emitting component 120 to the high-density phosphorlayer 131 of the wavelength conversion layer 130. Since the wavelengthconversion layer 130 extrudes the adhesive layer 140, the adhesive layer140 flow toward two sides of the light-emitting component 120 to formthe first lateral portion 141. The first lateral portion 141 has thelateral surface 141 s. Due to surface tension, the lateral surface 141 sis a concave surface. However, depending on the amount of the adhesivelayer 140 and/or the property of the adhesive layer 140, the lateralsurface 141 s may form a convex surface facing substrate 110. Inaddition, depending on the amount of the adhesive layer 140 and/or theproperty of the adhesive layer 140, the first lateral portion 141 maycover at least a portion of the lateral surface 120 s of thelight-emitting component 120.

As illustrated in an enlargement view of FIG, 9C, a portion of theadhesive layer 140 which remains on between the wavelength conversionlayer 130 and the light-emitting component 120 forms the heat resistancelayer 142. The heat resistance layer 142 can increase the heatresistance between the light-emitting component 120 and the wavelengthconversion layer 130, and accordingly it can slow the degrading speed ofthe wavelength conversion layer 130.

In addition, the adhesive layer 140 further includes the second lateralportion 143 which is formed between adjacent two light-emittingcomponents 120. The second lateral portion 143 has the lower surface 143s. Due to surface tension, the lower surface 143 s forms a concavesurface facing the substrate 110. However, depending on the amount ofthe adhesive layer 140 and/or the property of the adhesive layer 140,the lower surface 143 s may be a concave surface facing the substrate110.

As illustrated in FIG. 9D, at least one first singulation path W1 ispassing through the wavelength conversion layer 130 is formed to cut offthe wavelength conversion layer 130. In the present embodiment, thefirst singulation path W1 does not pass through the first lateralportion 141 of the adhesive layer 140. In another embodiment, the firstsingulation path W1 may pass through a portion of the first lateralportion 141 or the entire first lateral portion 141.

As illustrated in FIG. 9E, the fluid reflective layer 150 is formedabove the substrate 110 by way of, for example, dispensing, wherein thereflective layer 150 covers a portion of the lateral surface 120 s ofthe light-emitting component 120, the lateral surface 130 s of thewavelength conversion layer 130, the lateral surface 141 s of the firstlateral portion 141 of the adhesive layer 140, the lower surface 143 sof the second lateral portion 143, the lateral surface of the thirdelectrode 112 of the substrate 110, the lateral surface of the fourthelectrode 113 of the substrate 110, the lateral surface of the firstelectrode 121 of the light-emitting component 120 and the lateralsurface of the second electrode 122 of the light-emitting component 120through the first singulation path W1.

In addition, the reflective layer 150 includes the first reflectiveportion 151 and the second reflective portion 153, wherein the firstreflective portion 151 covers the first lateral portion 141, and thesecond reflective portion 153 covers the second lateral portion 143. Thefirst reflective portion 151 has the first reflective surface 151 scomplying with the lateral surface 141 s, and the first reflectivesurface 151 s is a convex surface due to the lateral surface 141 s beinga concave surface. The second reflective portion 153 has the secondreflective surface 153 s complying with the lower surface 143 s, and thesecond reflective surface 153 s is a concave surface due to the lateralsurface 141 s being a convex surface.

Then, the reflective layer 150 is cured by way of heating.

As illustrated in FIG. 9F, at least one second singulation path W2passing through the reflective layer 150 and the substrate 110 is formedto form the light-emitting device 400 of FIG. 4. The lateral surface 150s of the reflective layer 150 and the lateral surface 110 s of thesubstrate 110 are formed by the second singulation path W2, wherein thelateral surface 150 s and the lateral surface 110 s are substantiallyaligned or flush with each other.

In another embodiment, the second singulation path W2 may pass throughthe wavelength conversion layer 130, the reflective layer 150 and thesubstrate 110, such that the wavelength conversion layer 130, thereflective layer 150 and the substrate 110 form the lateral surface 130s, the lateral surface 150 s and lateral surface 110 s respectively,wherein the lateral surface 130 s, the lateral surface 150 s and lateralsurface 110 s are substantially aligned or flush with each other.

In other embodiment, the reflective layer 150 of the light-emittingdevice 400 may cover the lateral surface 120 s of at least onelight-emitting component 120, the lateral surface 142 s of the heatresistance layer 142 and the lateral surface 130 s of the wavelengthconversion layer 130 by using processes of FIGS. 7A to 7C.

In other embodiment, the reflective layer 150 of the light-emittingdevice 400 may cover the lateral surface 110 s of the substrate 110 byusing processes of FIGS. 8A to 8B.

FIG. 10 illustrates a cross sectional view of a light-emitting device500 according to another embodiment of the invention. The light-emittingdevice 500 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140, thereflective layer 150 and a translucent encapsulant 560, wherein thelight-emitting component 120, the wavelength conversion layer 130, theadhesive layer 140, the reflective layer 150 forms a light-emitting chip500′.

It is different from the aforementioned light-emitting device is thatthe reflective layer 150 of the light-emitting device 500 does not coverthe electrodes (for example, the first electrode 121 and the secondelectrode 122) of the light-emitting component 120. In addition, thereflective layer 150 and the light-emitting components 120 have a lowersurface 150 b and a lower surface 120 b, respectively, wherein the lowersurface 150 b does not project from lower surface 120 b. For example,the lower surface 150 b and the surface 120 b are substantially alignedor flush with each other. In another embodiment, the lower surface 150 bis recessed with respect to the lower surface 120 b.

It is different from the light-emitting device 100 is that thelight-emitting device 500 further include the translucent encapsulant560 formed on the substrate 110 and encapsulating the entirelight-emitting chip 500′, wherein the translucent encapsulant 560further encapsulates the first electrode 121 and the second electrode122. In comparison with the light-emitting device 100 of FIG. 1, thetranslucent encapsulant 560 of the present embodiment makes the light L1emitted from the light-emitting chip 500′ more uniform. In addition, asillustrated in figure, the translucent encapsulant 560 has alight-emitting surface 560 s. The light-emitting surface 560 s is formedby way of, for example, dispensing, such that the light-emitting surface560 s forms an arc light emitting surface. The arc light-emittingsurface 560 s may concentrate the light L1 passing through thelight-emitting surface 560 s in the direction of the optical axis toincrease the concentration of the light. In the present embodiment, thelight-emitting surface 560 s may extend continuously to the substrate110. The light-emitting surface 560 s is formed by way of dispensing andnot cut, such that it can maintain intact arc surface extending to thesubstrate 110.

The translucent encapsulant 560 includes, but is not limited to,silicone, epoxy resin or other synthetic resin suitable for packaging.The translucent encapsulant 560 may be an encapsulant without wavelengthconversion property. That is, the translucent sealant 560 does notcontain fluorescent particles. In another embodiment, the translucentencapsulant 560 may contain fluorescent particles to convert thewavelength of the light passing therethrough.

FIG. 11 illustrates a cross sectional view of a light-emitting device600 according to another embodiment of the invention. The light-emittingdevice 600 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the adhesive layer 140, thereflective layer 150 and a translucent encapsulant 660, wherein thelight-emitting component 120, the wavelength conversion layer 130, theadhesive layer 140, the reflective layer 150 form a light-emitting chip500′.

It is different from the light-emitting device 500 is that thetranslucent encapsulant 660 of the light-emitting device 600 has alight-emitting surface 560 s and a lateral surface 660 s connecting thelateral surface 110 s of the substrate 110 with the light-emittingsurface 560 s. Due to the lateral surface 660 s of the translucentencapsulant 660 and the lateral surface 110 s of the substrate 110 beingformed in the same singulation process, the lateral surface 660 s andthe lateral surface 110 s are plane, and the lateral surface 660 s andthe lateral surface 110 s are substantially aligned or flush with eachother. In addition, the translucent encapsulant 660 may be made of amaterial similar to that of the translucent encapsulant 560, and thesimilarities are not repeated herein again.

FIG. 12 illustrates a cross sectional view of a light-emitting device700 according to another embodiment of the invention. The light-emittingdevice 700 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the heat resistance layer 142 ofthe adhesive layer 140, the reflective layer 150 and the translucentencapsulant 560, wherein the light-emitting component 120, thewavelength conversion layer 130, the heat resistance layer 142 of theadhesive layer 140 and the reflective layer 150 form a light-emittingchip 600′.

It is different from the light-emitting device 200 is that thereflective layer 150 of the light-emitting device 700 does notencapsulate the electrodes (for example, the first electrode 121 and thesecond electrode 122) of the light-emitting component 120. In addition,the reflective layer 150 and the light-emitting components 120 have thelower surface 150 b and the lower surface 120 b, respectively, whereinthe lower surface 150 b does not project from lower surface 120 b. Forexample, the lower surface 150 b and the surface 120 b are substantiallyaligned or flush with each other. In another embodiment, the lowersurface 150 b is recessed with respect to the lower surface 120 b.

It is different from the light-emitting device 200 is that thelight-emitting device 700 further include the translucent encapsulant560 formed on the substrate 110 and encapsulating the entirelight-emitting chip 600′. The translucent encapsulant 560 may make thelight L1 emitted from the light-emitting chip 600′ more uniform. Asillustrated in figure, the translucent encapsulant 560 has thelight-emitting surface 560 s. The translucent encapsulant 560 is formedby way of, for example, dispensing, such that the light-emitting surface560 s forms an arc light emitting surface. The arc light-emittingsurface 560 s can concentrate the light L1 passing through thelight-emitting surface 560 s in the direction of the optical axis toincrease the concentration of the light. In the present embodiment, thelight-emitting surface 560 s may extend continuously to the substrate110. The light-emitting surface 560 s is formed by way of dispensing andnot cut, such that it can maintain intact arc surface extending to thesubstrate 110.

In another embodiment, the translucent encapsulant 560 of thelight-emitting device 700 may have similar lateral surface similar tothe lateral surface 660 s substantially aligned or flush with thesubstrate lateral of the substrate.

FIG. 13 illustrates a cross sectional view of a light-emitting device800 according to another embodiment of the invention. The light-emittingdevice 800 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the heat resistance layer 142 ofthe adhesive layer 140, the reflective layer 150 and the translucentencapsulant 660.

It is different from the light-emitting device 600 is that thetranslucent encapsulant 660, the reflective layer 150 and the substrate110 of the light-emitting device 800 have the lateral surface 660 s, afirst lateral surface 150 s 1 and the lateral surface 110 srespectively. Due to the lateral surface 660 s, the first lateralsurface 150 s 1 and the lateral surface 110 s being formed in the samesingulation process, the lateral surface 660 s, the first lateralsurface 150 s 1 and the lateral surface 110 s are substantially alignedor flush with each other. In addition, the reflective layer 150 furtherhas a second lateral surface 150 s 2, wherein the second lateral surface150 s 2 is recessed with respect to the first lateral surface 150 s 1,and the translucent encapsulant 660 further covers the second lateralsurface 150 s 2.

It is different from the light-emitting device 600 in that thelight-emitting device 800 of the present embodiment is formed on thesubstrate 110 and encapsulates the electrode (for example, the firstelectrode 121 and the second electrode 122) of the light-emittingcomponent 120.

FIG. 14 illustrates a cross sectional view of a light-emitting device900 according to another embodiment of the invention. The light-emittingdevice 900 includes the substrate 110, the light-emitting component 120,the wavelength conversion layer 130, the reflective layer 150 and thetranslucent encapsulant 660.

It is different from the light-emitting device 800 is that the lateralsurface 660 s of the translucent encapsulant 660 and the lateral surface110 s of the substrate 110 are substantially aligned or flush with eachother. In addition, the reflective layer 150 has the first lateralsurface 150 s 1 extending to the substrate 110, and the translucentencapsulant 660 covers the second lateral surface 150 s 2 of thereflective layer 150.

FIG. 15 illustrates a cross sectional view of a light-emitting device1000 according to another embodiment of the invention. Thelight-emitting device 1000 includes the substrate 110, a plurality ofthe light-emitting chips 500′ and a plurality of the translucentencapsulants 560. It is different from the light-emitting device 500 isthat the number of the light-emitting chips 500′ of the light-emittingdevice 1000 is more than one. As illustrated in figure, eachlight-emitting chip 500′ is encapsulated by one translucent encapsulant560. In addition, as viewed in top view of the structure of FIG. 15, thelight-emitting chips 500′ may be arranged in an array of 2×2. In anotherembodiment, the light-emitting chips 500′ may be arranged in an array ofn×m, where n and m are positive integers greater than 1, and n and m maybe the same or different. In other embodiment, the light-emitting chips500′ may be irregularly arranged or arranged according to alight-emitting requirement, The embodiment of the present invention isnot limited to the arrangement of the light-emitting chips 500′.

FIG. 16 illustrates a cross sectional view of a light-emitting device1100 according to another embodiment of the invention. Thelight-emitting device 1100 includes the substrate 110, a plurality ofthe light-emitting chips 600′ and a plurality of the translucentencapsulants 560. It is different from the light-emitting device 700 isthat the number of the light-emitting chips 600′ of the light-emittingdevice 1100 is more than one. As illustrated in figure, eachlight-emitting chip 600′ is encapsulated by one translucent encapsulant560. In addition, as viewed in top view of the structure of FIG. 16, thelight-emitting chips 600′ may be arranged in an array of 2×2. In anotherembodiment, the light-emitting chips 600′ may be arranged in an array ofn×m, where n and m are positive integers greater than 1, and n and m maybe the same or different. In other embodiments, the light-emitting chips600′ may be irregularly arranged or arranged according to alight-emitting requirement. The embodiment of the present invention isnot limited to the arrangement of the light-emitting chips 600′.

In addition, in another embodiment, the wavelength conversion layer 130(translucent layertranslucent layer) of each aforementioned embodimentmay be replaced by glass layer (translucent layer), wherein the glasslayer may be signal-layered glass structure or multi-layered glassstructure.

FIGS, 17A to 17G illustrate manufacturing processes of thelight-emitting device 500 of FIG. 10.

Firstly, the structure of FIG, 6A may be formed by the steps of FIGS.5A, 5B and 6A.

Then, as illustrated in FIG. 17A, the light-emitting components 120 aredisposed on the corresponding adhesive layer 140. In an embodiment, thewavelength conversion layer 130 of FIG. 6A may be disposed on thecarrier 10, and then the adhesive layer 140 is formed.

As illustrated in FIG. 17B, at least one first singulation path W1passing through the wavelength conversion layer 130 is formed, by way oflaser or cutting tool, to cut off the wavelength conversion layer 130.In the present embodiment, the first singulation path W1 does not passthrough the adhesive layer 140. In another embodiment, the firstsingulation path W1 may pass through the adhesive layer 140. Due to thewavelength conversion layer 130 being formed on the carrier 10, the cutoff wavelength conversion layer 130 does not come off from the carrier10.

As illustrated in FIG. 17C, the reflective layer 150 in fluid state isformed above the carrier 10 by way of, for example, compression molding,wherein the reflective layer 150 covers a portion of the lateral surface120 s of the light-emitting component 120, the lateral surface 130 s ofthe wavelength conversion layer 130 and the lateral surface 141 s of thefirst lateral portion 141 of the adhesive layer 140 through the firstsingulation path W1 (as illustrated in FIG. 17B), but not covers thefirst electrode 121 and the second electrode 122 of the light-emittingcomponent 120 for exposing the first electrode 121 and the secondelectrode 122.

As illustrated in FIG. 17D, at least one second singulation path W2passing through the reflective layer 150 is formed, by way of laser orcutting tool, to form at least one light-emitting chip 500′, wherein thelight-emitting chip 500′ includes the light-emitting component 120, thewavelength conversion layer 130, the adhesive layer 140 and thereflective layer 150.

As illustrated in FIG. 17E, a plurality of the light-emitting chips 500′of FIG. 17D may be disposed on the substrate 110 by using, for example,Surface Mount Technology (SMT). Before disposing the light-emitting chip500′ on the substrate 110, the substrate 110 is adhered to anothercarrier 10′, and then the light-emitting chips 500′ are disposed on thesubstrate 110. Due to the first electrode 121 and the second electrode122 being exposed in the step of FIG. 17C, the exposed first electrode121 and the second electrode 122 may be electrically connected to thesubstrate 110 in the step of FIG. 17E.

As illustrated in FIG. 17F, a plurality of the translucent encapsulants560 are formed to cover the light-emitting chips 500′ by using adispensing technique, wherein one translucent encapsulant 560encapsulates one light-emitting chip 500′. Then, the translucentencapsulants 560 is heated to be solidified.

As illustrated in FIG. 17G, at least one third singulation path W3passing through the wavelength conversion layer 130 is formed, by way oflaser or cutting tool, to form at least one light-emitting device 500 ofFIG. 10.

FIG. 18 illustrates manufacturing process of the light-emitting device600 of FIG. 11. As illustrated in figure, at least one third singulationpath W3 passing through the translucent encapsulant and the substrate110 of FIG. 17F is formed, by way of laser or cutting tool, to form atleast one light-emitting device 600 of FIG. 11. After singulating, thetranslucent encapsulant 660 and the substrate 110 form the lateralsurface 660 s and the lateral surface 110 s respectively, wherein thelateral surface 660 s and the lateral surface 110 s are substantiallyaligned or flush with each other. Due to the substrate 110 being adheredto the carrier 10′, the cut off light-emitting device 600 does not comeoff the carrier 10.

The following steps of the light-emitting device 600 are similar thecorresponding steps of the light-emitting device 500, and thesimilarities are not repeated.

FIGS. 19A to 19F illustrate manufacturing processes of thelight-emitting device 700 of FIG. 12.

Firstly, as illustrated in FIG. 19A, at least one first singulation path

W1 passing through the wavelength conversion layer 130 and the firstlateral portion 141 of the adhesive layer 140 of FIG. 17A is formed, byway of laser or cutting tool. Due the wavelength conversion layer 130being adhered to the carrier 10, the cut off wavelength conversion layer130 does not come off the carrier 10.

As illustrated in FIG. 19B, the reflective layer 150 in a fluid state isformed above the carrier 10 by way of, for example, compression molding,wherein the reflective layer 150 covers the lateral surface 120 s of thelight-emitting component 120 and the lateral surface 130 s of thewavelength conversion layer 130 through the first singulation path W1(as illustrated in FIG. 19A), but not covers the first electrode 121 andthe second electrode 122 of the light-emitting component 120 forexposing the first electrode 121 and the second electrode 122.

As illustrated in FIG. 19C, at least one second singulation path W2passing through (cut off) the reflective layer 150 is formed, by way oflaser or cutting tool, to form at least one light-emitting chip 600′,wherein the light-emitting chip 600′ includes the light-emittingcomponent 120, the wavelength conversion layer 130, the heat resistancelayer 142 (not illustrated in FIG. 190) of the adhesive layer 140 andthe reflective layer 150.

As illustrated in FIG. 19D, a plurality of the light-emitting chips 600′of FIG. 190 are disposed on the substrate 110 by using, for example,SMT. Before disposing the light-emitting chip 600′ on the substrate 110,the substrate 110 may be adhered to another carrier 10′, and then thelight-emitting chips 600′ are disposed on the substrate 110. Due to thefirst electrode 121 and the second electrode 122 being exposed in thestep of FIG. 19B, the exposed first electrode 121 and the secondelectrode 122 may be electrically connected to the substrate 110 in thestep of FIG. 19D.

As illustrated in FIG. 19E, a plurality of the translucent encapsulants560 encapsulating the light-emitting chips 600′ are formed by using adispensing technique, wherein one translucent encapsulant 560encapsulates one light-emitting chip 600′. Then, the translucentencapsulants 560 is heated to be solidified.

As illustrated in FIG. 19F, at least one third singulation path W3passing through (cut off) the substrate 110 is formed, by way of laseror cutting tool, to form at least one light-emitting device 700 of FIG.12.

FIGS. 20A to 20C illustrate manufacturing processes of thelight-emitting device 800 of FIG. 13.

Firstly, as illustrated in FIG. 20A, after the step of FIG. 5G, at leastone second singulation path W2 passing through a portion of thereflective layer 150 of FIG. 5G, that is, the reflective layer 150 isnot cut off. After singulating, the reflective layer 150 forms thesecond lateral surface 150 s 2.

Then, as illustrated in FIG. 20B, a plurality of the translucentencapsulants 660 in fluid state are formed, by way of, for example,compression molding, to encapsulant an upper surface 130 u of thewavelength conversion layer 130 and the second lateral surface 150 s 2of the reflective layer 150. Due to the translucent encapsulant 660being in the fluid state, adjacent two translucent encapsulants 660 areconnected with each other through the second singulation path W2.

Then, as illustrated in FIG. 200, at least one third singulation path W3passing through the translucent encapsulant 660, the reflective layer150 and the substrate 110 is formed, by way of laser or cutting tool, toform at least one light-emitting device 800 of FIG. 13. Aftersingulating, the translucent encapsulant 660, the reflective layer 150and the substrate 110 form the lateral surface 660 s, the first lateralsurface 150 s 1 and the lateral surface 110 s, respectively, wherein thelateral surface 660 s, the first lateral surface 150 s 1 and the lateralsurface 110 s are substantially aligned or flush with each other. Due tothe third singulation path W3 having a width less than that of thesecond singulation path W2, formation of the third singulation path W3does not cut the second lateral surface 150 s 2 of the reflective layer150, such that the first lateral surface 150 s 1 and the second lateralsurface 150 s 2 form a step structure.

In addition, when the wavelength conversion layer 130 is replaced byglass layer, in the aforementioned manufacturing processes of thelight-emitting devices, the wavelength conversion layer 130 of FIG. 5Amay be replaced by glass, and the step of FIG. 5B may be omitted.

FIGS. 21A to 21C illustrate manufacturing processes of thelight-emitting device 900 of FIG. 14.

Firstly, as illustrated in FIG. 21A, after the step of FIG. 5G, at leastone second singulation path W2 passing through the entire reflectivelayer 150 of FIG. 5G to cut off the reflective layer 150. Aftersingulating, the reflective layer 150 forms the first lateral surface150 s 1 extending to the substrate 110.

Then, as illustrated in FIG. 21B, a plurality of the translucentencapsulants 660 in fluid state are formed, by way of, for example,compression molding, to encapsulate the upper surface 130 u of thewavelength conversion layer 130 and the first lateral surface 150 s 1 ofthe reflective layer 150. Due to the translucent encapsulant 660 beingin the fluid state, adjacent two translucent encapsulants 660 areconnected with each other through the second singulation path W2.

Then, as illustrated in FIG. 210, at least one third singulation path W3passing through the translucent encapsulant 660 and the substrate 110 isformed, by way of laser or cutting tool, to form at least onelight-emitting device 900 of FIG. 14. After singulating, the translucentencapsulant 660 and the substrate 110 form the lateral surface 660 s andthe lateral surface 110 s, respectively, wherein the lateral surface 660s and the lateral surface 110 s are substantially aligned or flush witheach other. Due to the third singulation path W3 having a width lessthan that of the second singulation path W2, formation of the thirdsingulation path W3 does not cut the first lateral surface 150 s 1 ofthe reflective layer 150.

FIG. 22 illustrates manufacturing process of the light-emitting device1000 of FIG. 15. At least one third singulation path W3 passing throughthe substrate 110 of FIG. 17F is formed, by way of laser or cuttingtool, to form at least one light-emitting device 1000 of FIG. 15. Aftersingulating, the light-emitting device 1000 includes a plurality of thelight-emitting chips 500′ and a plurality of the translucentencapsulants 560, wherein one translucent encapsulant 560 encapsulatesone light-emitting chip 500′.

FIG. 23 illustrates manufacturing process of the light-emitting device1100 of FIG. 16. At least one third singulation path W3 passing throughthe substrate 110 of FIG. 19E is formed, by way of laser or cuttingtool, to form at least one light-emitting device 1100 of FIG. 16. Aftersingulating, the light-emitting device 1100 includes a plurality of thelight-emitting chips 600′ and a plurality of the translucentencapsulants 560, wherein one translucent is encapsulant 560encapsulates one light-emitting chip 600′.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodiments.It is intended that the specification and examples be considered asexemplary only, with a true scope of the disclosure being indicated bythe following claims and their equivalents.

What is claimed is:
 1. A manufacturing method of a light-emittingdevice, comprises: providing a substrate and a light-emitting componentdisposed on the substrate; providing a translucent layer; connecting thetranslucent layer with the light-emitting component by an adhesivelayer; forming a reflective layer above the substrate, wherein thereflective layer covers a lateral surface of the light-emittingcomponent, a lateral surface of the adhesive layer and a lateral surfaceof the translucent layer; and forming a translucent encapsulant on thesubstrate to encapsulate the light-emitting component, the translucentlayer and the reflective layer.
 2. The manufacturing method according toclaim 1, wherein before the step of forming the reflective layer abovethe substrate, the manufacturing method further comprises: forming afirst singulation path passing through the translucent layer to form thelateral surface of the translucent layer; wherein after the step offorming the reflective layer above the substrate, the manufacturingmethod further comprises: forming a second singulation path passingthrough the reflective layer to form a light-emitting chip; disposingthe light-emitting chip on the substrate; wherein in the step of formingthe translucent encapsulant on the substrate to encapsulate thelight-emitting component, the translucent layer and the reflectivelayer, the translucent encapsulant encapsulates the light-emitting chip.3. The manufacturing method according to claim 2, wherein after the stepof forming the translucent encapsulant on the substrate to encapsulatethe light-emitting component, the translucent layer and the reflectivelayer, the manufacturing method further comprises: forming a thirdsingulation path passing through the substrate.
 4. The manufacturingmethod according to claim 2, wherein after the step of forming thetranslucent encapsulant on the substrate to encapsulate thelight-emitting component, the translucent layer and the reflectivelayer, the manufacturing method further comprises: forming a thirdsingulation path passing through the translucent encapsulant and thesubstrate, wherein the translucent encapsulant and the substrate eachforms a lateral surface, and the lateral surface of the translucentencapsulant and the lateral surface of the substrate are substantiallyaligned or flush with each other.
 5. The manufacturing method accordingto claim 1, wherein before the step of forming the reflective layerabove the substrate, the manufacturing method further comprises: forminga first singulation path passing through the reflective layer to formthe lateral surface of the reflective layer; wherein after the step offorming the reflective layer above the substrate, the manufacturingmethod further comprises: forming a second singulation path passingthrough the reflective layer and the adhesive layer to form alight-emitting chip; disposing the light-emitting chip on the substrate;wherein in the step of forming the translucent encapsulant on thesubstrate to encapsulate the light-emitting component, the translucentlayer and the reflective layer, the translucent encapsulant encapsulatesthe light-emitting chip.
 6. The manufacturing method according to claim5, wherein in the step of forming the second singulation path passingthrough the reflective layer and the adhesive layer to form thelight-emitting chip and remove the adhesive layer formed on the lateralsurface of the light-emitting component.